A Millimeter-Wave Reconfigurable On-Chip Coupler With Tunable Power-Dividing Ratios in 0.13-μm BiCMOS Technology

被引:21
|
作者
Yang, Yang [1 ]
Hou, Zhang Ju [2 ]
Zhu, Xi [1 ]
Che, Wenquan [3 ]
Xue, Quan [3 ]
机构
[1] Univ Technol Sydney, Tech Lab, Sch Elect & Data Engn, Ultimo, NSW 2007, Australia
[2] Sunway Commun, Shenzhen 518104, Peoples R China
[3] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510641, Peoples R China
关键词
5G; millimeter-wave; on-chip tunable device; coupler; phase error; silicon-germanium (SiGe); (Bi) CMOS; power dividing ratio; PHASED-ARRAY RECEIVER; QUADRATURE COUPLER; SIGE BICMOS; BANDWIDTH;
D O I
10.1109/TCSI.2020.2964574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a millimeter-wave (mm-wave) on-chip coupler with tunable power dividing ratios and constant phase response. Composed by two coupled lines, two capacitors and two series-connected varactors, the proposed tunable coupler offers broadband frequency responses for 5G applications. Theoretical analysis for wideband operation is provided. For demonstration, a millimeter-wave tunable coupler is implemented in a standard 0.13- SiGe (Bi) CMOS technology and measured through an on-wafer probing system. From 24 to 38 GHz, the proposed tunable coupler shows a power-dividing ratio ranged from 0 to 6.5 dB, while maintaining an in-band return loss of better than 10 dB and output isolation of 20 dB, simultaneously. The phase imbalance is better than +/- 2.5 degrees with a measured insertion loss of 1.3 dB across the entire tuning range. To the authors' best knowledge, this is the first time that an on-chip coupler with tunable power-dividing ratios is reported operating at mm-wave bands for, particularly, 5G applications.
引用
收藏
页码:1516 / 1526
页数:11
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