Second harmonic generation probing of dopant type and density at the Si/SiO2 interface

被引：29
|
作者：
Fiore, Julie L. [1 ]
Fomenko, Vasiliy V. [1 ]
Bodlaki, Dora [1 ]
Borguet, Eric [1 ]
机构：
[1] Temple Univ, Dept Chem, Philadelphia, PA 19122 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期
基金：
美国国家科学基金会;
关键词：
CHARGE-TRANSFER; SPECTROSCOPY; SI(001); SURFACES;
D O I：
10.1063/1.3505356
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-dependent second-harmonic generation (TD-SHG) is shown to be a sensitive, noncontact probe of dopant type and concentration at Si/SiO2 interfaces. TD-SHG signal magnitude increases for n-Si(111)/SiO2, while for p-Si(111)/SiO2 TD-SHG is nonmonotonic. This behavior is interpreted as a consequence of SHG sensitivity to electric fields induced by interfacial charge transfer and trapping. (c) 2011 American Institute of Physics. [doi:10.1063/1.3505356]
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页数：3
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