Second harmonic generation probing of dopant type and density at the Si/SiO2 interface

被引：29

作者：

Fiore, Julie L. ^{[1
]}

Fomenko, Vasiliy V. ^{[1
]}

Bodlaki, Dora ^{[1
]}

Borguet, Eric ^{[1
]}

机构：

[1] Temple Univ, Dept Chem, Philadelphia, PA 19122 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期

基金：

美国国家科学基金会;

关键词：

CHARGE-TRANSFER; SPECTROSCOPY; SI(001); SURFACES;

D O I：

10.1063/1.3505356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-dependent second-harmonic generation (TD-SHG) is shown to be a sensitive, noncontact probe of dopant type and concentration at Si/SiO2 interfaces. TD-SHG signal magnitude increases for n-Si(111)/SiO2, while for p-Si(111)/SiO2 TD-SHG is nonmonotonic. This behavior is interpreted as a consequence of SHG sensitivity to electric fields induced by interfacial charge transfer and trapping. (c) 2011 American Institute of Physics. [doi:10.1063/1.3505356]

引用

页数：3

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