Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

被引：17

作者：

Jiang, Jie ^{[1
]}

Lu, Yinmei ^{[1
]}

Kramm, Benedikt ^{[1
]}

Michel, Fabian ^{[1
]}

Reindl, Christian T. ^{[1
]}

Kracht, Max E. ^{[1
]}

Klar, Peter J. ^{[1
]}

Meyer, Bruno K. ^{[1
]}

Eickhoff, Martin ^{[1
]}

机构：

[1] Univ Giessen, Phys Inst, Heinrich Buff Ring 16, D-35392 Giessen, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 06期

关键词：

chemical composition; chemical vapor deposition; nitrogen; SnO2; structure; thin films; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; RAY PHOTOELECTRON-SPECTROSCOPY; ATOMIC LAYER DEPOSITION; X-RAY; ELECTRICAL-PROPERTIES; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; NANOCRYSTALLINE SNO2; SOLAR-CELLS;

D O I：

10.1002/pssb.201552747

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2-xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2-xNx films with increasing x are found by X-ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X-ray photoelectron spectroscopy, attributed to the N3- ion in the Sn-N bond. The increase of the N atomic concentration x in SnO2-xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1087 / 1092

页数：6

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