Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

被引：17
|
作者：
Jiang, Jie [1 ]
Lu, Yinmei [1 ]
Kramm, Benedikt [1 ]
Michel, Fabian [1 ]
Reindl, Christian T. [1 ]
Kracht, Max E. [1 ]
Klar, Peter J. [1 ]
Meyer, Bruno K. [1 ]
Eickhoff, Martin [1 ]
机构：
[1] Univ Giessen, Phys Inst, Heinrich Buff Ring 16, D-35392 Giessen, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 06期
关键词：
chemical composition; chemical vapor deposition; nitrogen; SnO2; structure; thin films; MOLECULAR-BEAM EPITAXY; P-TYPE ZNO; RAY PHOTOELECTRON-SPECTROSCOPY; ATOMIC LAYER DEPOSITION; X-RAY; ELECTRICAL-PROPERTIES; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; NANOCRYSTALLINE SNO2; SOLAR-CELLS;
D O I：
10.1002/pssb.201552747
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2-xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2-xNx films with increasing x are found by X-ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X-ray photoelectron spectroscopy, attributed to the N3- ion in the Sn-N bond. The increase of the N atomic concentration x in SnO2-xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1087 / 1092
页数：6
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