An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply

被引：1
|
作者：
Nagao, Junichiro [1 ]
Chatterjee, Urmimala [2 ]
Li, Xiangdong [2 ]
Furuta, Jun [1 ]
Decoutere, Stefaan [2 ]
Kobayashi, Kazutoshi [1 ]
机构：
[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Sakyo Ku, Kyoto 6068585, Japan
[2] Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
IEICE ELECTRONICS EXPRESS | 2021年 / 18卷 / 06期
关键词：
GaN HEMT; monolithic integration; three-level gate driver; false turn-on; reverse conduction loss; high-speed switching;
D O I：
10.1587/elex.18.20210059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-level gate driver and a power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) were monolithically integrated to prevent false turn-on, reduce reverse conduction loss and realize fast switching. The proposed gate driver works with an external and an integrated capacitor which supply negative gate voltage. Monolithic integration makes power conversion circuits smaller in size and improves circuit performance due to its lower parasitics. The integrated MIM (Metal-Insulator-Metal) capacitor improves dv/dt immunity. Measurement results showed that the proposed GaN-IC realized fast switching speed of 3.7 ns t(on) and 6.1 ns t(off), and improved efficiency of an SR buck-converter.
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页数：6
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