Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs

被引：0
|
作者：
Liao, Hang [1 ]
Zheng, Zheyang [1 ,2 ]
Zhang, Li [1 ]
Chen, Tao [1 ]
Cheng, Yan [1 ]
Chen, Kevin J. [1 ]
机构：
[1] Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, Hong Kong
[2] School of Microelectronics, University of Science and Technology of China, Anhui, Hefei, China
来源：
Applied Physics Letters | 2024年 / 125卷 / 20期
关键词：
Gallium nitride;
D O I：
10.1063/5.0233528
中图分类号：
学科分类号：
摘要：
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