Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

被引：0
|
作者：
Lee, Ethan S. [1 ]
del Alamo, Jesus A. [1 ]
Joh, Jungwoo [2 ]
Lee, Dong Seup [2 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
[2] Texas Instruments Inc, Analog Technol Dev, Dallas, TX USA
来源：
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2022年
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
P21
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页数：1
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