Origin of metallic states at the heterointerface between the band insulators LaAlO3 and SrTiO3
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作者:
Yoshimatsu, K.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Yoshimatsu, K.
[1
]
Yasuhara, R.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Yasuhara, R.
[1
]
Kumigashira, H.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Agcy, CREST, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Kumigashira, H.
[1
,2
]
Oshima, M.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Agcy, CREST, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Oshima, M.
[1
,2
]
机构:
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy, CREST, Bunkyo Ku, Tokyo 1138656, Japan
We have studied the electronic structure at the heterointerface between the band insulators LaAlO(3) and SrTiO(3) using in situ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO(3) side due to band bending at the metallic LaAlO(3)/TiO(2)-SrTiO(3) interface. The structure, however, is absent at the insulating LaAlO(3)/SrO-SrTiO(3) interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.