SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing

We propose an ECR ozone plasma re-oxidation annealing (ROA) method that can introduce high-concentration and high-reactivity O atoms to eliminate defects near the SiC/SiO2 interface with low temperature (400 degrees C). This method can more effectively improve the electrical performance of SiC MOS capacitors compared with other ROA methods, including O-2, O-3 and O-2 plasma ROA methods. Secondary ion mass spectroscopy (SIMS), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) are performed. Results indicate that the O3P-ROA can evidently re-oxidize near-interface defects, which optimize near-interface properties, including the elemental distribution of the near-interface region and the morphology of the SiC/SiO2 interface. In addition, the effects of temperature and oxygen element on near-interface properties of SiC MOS capacitors are discussed in this paper.