Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

被引：13
|
作者：
Her, Jim-Long [2 ]
Pan, Tung-Ming [1 ]
Lu, Chih-Hung [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
[2] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Tao Yuan 333, Taiwan
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 17期
关键词：
Forming-free; Resistive switching; Dysprosium oxide; Ru/Dy2O3/TaN; Ohmic behavior; Poole-Frenkel emission; Sputtering;
D O I：
10.1016/j.tsf.2012.04.045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article, we report the forming-free resistive switching behavior of a Ru/Dy2O3/TaN memory device incorporating a Dy2O3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy2O3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole-Frenkel emission, respectively. The Ru/Dy2O3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：5706 / 5709
页数：4
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