Effects of growth temperature on Mg-doped ZnO films fabricated by pulsed-laser deposition

被引：3

作者：

Fang, Hau-Wei ^{[1
]}

Juang, Jenh-Yih ^{[2
]}

Liu, Shiu-Jen ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan

[3] Natl Taiwan Normal Univ, Appl Phys Lab, 2,Sec 1,Renai Rd, New Taipei 24449, Taiwan

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2017年 / 14卷 / 12期

关键词：

p-type; ZnO films; photoluminescence; X-ray photoelectron spectroscopy; XPS; pulsed-laser deposition; PLD; Mg doping; LIGHT-EMITTING-DIODES; P-TYPE BEHAVIOR; THIN-FILMS; MGXZN1-XO FILMS; SYSTEMS; ALLOY; OXIDE;

D O I：

10.1504/IJNT.2017.087776

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnesium-doped zinc oxide (MZO) films were fabricated by pulsed-laser deposition (PLD) at various substrate temperatures (T-s). The substitution of Mg for Zn sites (Mg-Zn) in the films was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) measurements. Characteristic deep-level emissions (DLE) observed in the RTPL spectra further indicate the presence of Zn vacancies (V-Zn) in the MZO films. Moreover, it was found that the intensity of the blue emission corresponding to V-Zn increases with increasing T-s, indicating the important role played by T-s on the incorporation of Mg into ZnO matrix. Hall effect measurements reveal the p-type conduction of the MZO films grown at 400 degrees C. The p-type characteristic is attributed to the formation of nMg(Zn) - V-Zn complex which could act as acceptor for MZO films.

引用

页码：992 / 1000

页数：9

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