Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

被引：116
|
作者：
Cao, B. Q.
Lorenz, M.
Rahm, A.
von Wenckstern, H.
Czekalla, C.
Lenzner, J.
Benndorf, G.
Grundmann, M.
机构：
[1] Univ Leipzig, Inst Expt Phys 2, D-04108 Leipzig, Germany
[2] Solar AG, Leipzig, Germany
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 45期
关键词：
D O I：
10.1088/0957-4484/18/45/455707
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Phosphorus-doped ZnO (ZnO: P) nanowires were successfully prepared by a novel high-pressure pulsed- laser deposition process using phosphorus pentoxide as the dopant source. Detailed cathodoluminescence studies of single ZnO: P nanowires revealed characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission (A(0), X, 3.356 eV), free-to-neutral-acceptor emission (e, A(0), 3.314 eV), and donor-to-acceptor pair emission (DAP, similar to 3.24 and similar to 3.04 eV). This means that stable acceptor levels with a binding energy of about 122 meV have been induced in the nanowires by phosphorus doping. Moreover, the induced acceptors are distributed homogeneously along the doped nanowires.
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页数：5
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