Electronic and optical properties of InAs(110)

被引:0
|
作者
López-Lozano, X
Noguez, C
Meza-Montes, L
机构
[1] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
关键词
surface reconstruction; surface states; reflectance anisotropy; differential reflectance; semiconductor surface; indium arsenide; III-V surface;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface.
引用
收藏
页码:168 / 175
页数:8
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