Electronic and optical properties of non-uniformly shaped InAs/InP quantum dashes

被引:9
|
作者
Kaczmarkiewicz, Piotr [1 ]
Machnikowski, Pawel [1 ]
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
关键词
AMPLIFIERS; LASERS; STATES; DOTS;
D O I
10.1088/0268-1242/27/10/105012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We theoretically study the optical properties and the electronic structure of highly elongated InAs/InP quantum dots (quantum dashes) and show how carrier trapping due to geometrical fluctuations of the confining potential affects the excitonic spectrum of the system. We focus on the study of the optical properties of a single exciton confined in the structure. The dependence of the absorption and emission intensities on the geometrical properties (size and position) of the trapping centre within the quantum dash is analysed and the dependence of the degree of linear polarization on these geometrical parameters is studied in detail. The role of Coulomb correlations for the optical properties of these structures is clarified.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Effect of Confinement Anisotropy on Excitonic Properties in InAs/InP Quantum Dashes
    Mrowinski, P.
    Musial, A.
    Sek, G.
    Misiewicz, J.
    Hoefling, S.
    Somers, A.
    Hein, S.
    Forchel, A.
    ACTA PHYSICA POLONICA A, 2013, 124 (05) : 801 - 804
  • [2] Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
    Huang, Fujuan
    Chen, Gaowen
    Zhang, Xiupu
    PHOTONICS, 2024, 11 (08)
  • [3] Effect of confinement anisotropy on excitonic properties in InAs/InP quantum dashes
    Mrowin´ski, P. (pawel.mrowinski@pwr.wroc.pl), 1600, Polska Akademia Nauk (124):
  • [4] InAs/InP Quantum Dots, Dashes, and Ordered Arrays
    Sritirawisarn, Nut
    Notzel, Richard
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [5] Midinfrared electroluminescence from InAs/InP quantum dashes
    Liverini, V.
    Bismuto, A.
    Nevou, L.
    Beck, M.
    Faist, J.
    APPLIED PHYSICS LETTERS, 2010, 97 (22)
  • [6] Optical investigation of InAs quantum dashes grown on InP(001) vicinal substrate
    Besahraoui, F.
    Bouslama, M.
    Saidi, F.
    Bouzaiene, L.
    Alouane, M. H. Hadj
    Maaref, H.
    Chauvin, N.
    Gendry, M.
    Lounis, Z.
    Ghaffour, M.
    SUPERLATTICES AND MICROSTRUCTURES, 2014, 65 : 264 - 270
  • [7] InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties
    Mrowinski, P.
    Dusanowski, L.
    Somers, A.
    Hoefling, S.
    Reithmaier, J. P.
    Misiewicz, J.
    Sek, G.
    ACTA PHYSICA POLONICA A, 2017, 132 (02) : 382 - 385
  • [8] Formation of InAs/InGaAsP quantum-dashes on InP(001)
    Lenz, A.
    Genz, F.
    Eisele, H.
    Ivanova, L.
    Timm, R.
    Franke, D.
    Kuenzel, H.
    Pohl, U. W.
    Daehne, M.
    APPLIED PHYSICS LETTERS, 2009, 95 (20)
  • [9] Optical properties of quantum dashes
    Sek, G.
    Musial, A.
    Mrowinski, P.
    Marynski, A.
    Andrzejewski, J.
    Misiewicz, J.
    Somers, A.
    Forchel, A.
    Hoefling, A.
    PHYSICS AND TECHNOLOGY OF NANOSTRUCTURED MATERIALS II, 2014, 213 : 3 - 11
  • [10] Lateral Coupling within the Ensemble of InAs/InGaAlAs/InP Quantum Dashes
    Ryczko, K.
    Sek, G.
    Misiewicz, J.
    ACTA PHYSICA POLONICA A, 2013, 124 (05) : 805 - 808