Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure

被引：0

作者：

Gamachi, W. ^{[1
]}

Ishii, K. ^{[1
]}

Asubar, J. T. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, 3-9-1 Bunkyo, Fukui 9108507, Japan

来源：

2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年

关键词：

AlGaN/GaN MISHEMTs; threshold voltage; normally-off; reverse-bias annealing;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report on high positive threshold voltage and respectable drain current density obtained from our AlGaN/GaN MIS-HEMTs with recessed-gate structure. After subjecting the device to reverse bias annealing, on top of improved subthreshold swing and leakage characteristics, its threshold voltage shifted from -0.2 V to + 3.5 V. We have also confirmed that these desirable device characteristics remain unchanged after weeks of storage at room temperature.

引用

页码：88 / 89

页数：2

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