Bias-dependent small-signal modeling of GaAsPIN diodes

被引：1
|
作者：
Fejzuli, A
Dunleavy, L
Snider, A
Allen, D
机构：
[1] Univ S Florida, Dept Elect Engn, WAMI Program, Tampa, FL 33620 USA
[2] JDS Uniphase, Melbourne, FL USA
[3] Triquint Semicond, Dallas, TX 75265 USA
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2001年 / 11卷 / 02期
关键词：
D O I：
10.1002/mmce.1005
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias-dependent S-parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent equations are then curve fitted, and then incorporated into a commercially available computer-aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions. (C) 2001 John Wiley & Sons, Inc.
引用
收藏
页码：99 / 106
页数：8
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