Bias-dependent small-signal modeling of GaAsPIN diodes

被引：1

作者：

Fejzuli, A

Dunleavy, L

Snider, A

Allen, D

机构：

[1] Univ S Florida, Dept Elect Engn, WAMI Program, Tampa, FL 33620 USA

[2] JDS Uniphase, Melbourne, FL USA

[3] Triquint Semicond, Dallas, TX 75265 USA

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2001年 / 11卷 / 02期

关键词：

D O I：

10.1002/mmce.1005

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias-dependent S-parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent equations are then curve fitted, and then incorporated into a commercially available computer-aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions. (C) 2001 John Wiley & Sons, Inc.

引用

页码：99 / 106

页数：8

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