Large signal bias-dependent modeling of PHEMTs by pulsed measurements

被引：0
|
作者：
Ooi, BL [1 ]
Lan, K [1 ]
Leong, MS [1 ]
Kooi, KS [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, MMIC Modeling & Packaging Lab, Singapore 119260, Singapore
来源：
2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年
关键词：
D O I：
10.1109/RFIC.2001.935665
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bias-dependent large signal model and corresponding parameter extraction procedures are presented to characterize PHEMT transistors by pulsed measurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of PHEMTs from DC to RF at any bias points.
引用
收藏
页码：155 / 157
页数：3
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