Stress analysis of SiO2/Ta/Pt/PZT/Pt stack for MEMS application

被引：0
|
作者：
Zakar, E [1 ]
Polcawich, R [1 ]
Dubey, M [1 ]
Pulskamp, J [1 ]
Piekarski, B [1 ]
Conrad, J [1 ]
Piekarz, R [1 ]
机构：
[1] USA, Res Lab, Adelphi, MD 20783 USA
来源：
PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II | 2001年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stress analysis of accumulated, individual, and removed layer stress was performed for the Si/SiO2/Ta/Pt/PZT/Pt stack consisting of sol-gel deposited lead zirconate titinate (PZT 52/48) thin films. The final accumulated stress of the stack normalized to a tensile value of 175 MPa. The as-deposited condition of the individual layers SiO2, top and bottom Pt layers were initially compressive but changed to tensile after annealing. The stress of the removed layer (induced stress) was relatively high for the bottom Pt layer.
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页码：757 / 759
页数：3
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