Use of transmission electron microscopy for the characterization of the structure of Pt/PZT/Pt/TiN/Ti/SiO2/Si.: Correlation with electrical properties

被引：0
|
作者：
Varniere, F [1 ]
Eakim, B [1 ]
Aubert, P [1 ]
Ayguavives, F [1 ]
Agius, B [1 ]
Bisaro, R [1 ]
机构：
[1] Univ Paris Sud, CNRS, Lab Etudes Mat Films Minces, F-91000 Orsay, France
来源：
PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON THIN FILM MATERIALS, PROCESSES, RELIABILITY, AND APPLICATIONS: THIN FILM PROCESSES | 1998年 / 97卷 / 30期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Radio-frequency magnetron sputtering was used to deposit Pb(ZrTi)O-3 (PZT) ferroelectric 500 nm thin films on Pt/TiN/Ti/SiO2/Si(100) structures. Thin films were deposited with argon pressures of 0.5-3 Pa, in a range of temperatures of RT- 400 degrees C with sputtering power of 1.7 W/cm(2). The microstucture and preferred orientations of rapid thermally annealing PZT have been investigated using transmission electron microscopy and X-Ray diffraction. The ramp rate and the holding temperature of anneal were found to influence the degree of crystallization of the films and so the mean grain size. The deposition conditions of deposition were also found to influence the growth of the film, Ferroelectric properties are strongly related to this microstructure.
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页码：309 / 316
页数：8
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