Wurtzite ZnO (001) films grown on cubic MgO (001) with bulk-like opto-electronic properties

被引：14

作者：

Zhou, Hua ^{[1
]}

Wang, Hui-Qiong ^{[1
]}

Wu, Lijun ^{[2
]}

Zhang, Lihua ^{[3
]}

Kisslinger, Kim ^{[3
]}

Zhu, Yimei ^{[2
]}

Chen, Xiaohang ^{[1
]}

Zhan, Huahan ^{[1
]}

Kang, Junyong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Key Lab Semicond & Applicat Fujian Prov, Xiamen 361005, Peoples R China

[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA

[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 14期

关键词：

II-VI semiconductors; molecular beam epitaxial growth; plasma materials processing; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; solid-state phase transformations; transmission electron microscopy; wide band gap semiconductors; zinc compounds; EPITAXIAL ZNO; HETEROEPITAXIAL GROWTH; THIN-FILMS; PLANE;

D O I：

10.1063/1.3647846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of ZnO (001) wurtzite thin films with bulk-like opto-electronic properties on MgO (001) cubic substrates using plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and ex situ high resolution transmission electron microscopy images indicate that the structure transition from the cubic MgO substrates to the hexagonal films involves 6 ZnO variants that have the same structure but different orientations. This work demonstrates the possibility of integrating wurtzite ZnO films and functional cubic substrates while maintaining their bulk-like properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647846]

引用

页数：3

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