Wurtzite ZnO (001) films grown on cubic MgO (001) with bulk-like opto-electronic properties

被引:14
|
作者
Zhou, Hua [1 ]
Wang, Hui-Qiong [1 ]
Wu, Lijun [2 ]
Zhang, Lihua [3 ]
Kisslinger, Kim [3 ]
Zhu, Yimei [2 ]
Chen, Xiaohang [1 ]
Zhan, Huahan [1 ]
Kang, Junyong [1 ]
机构
[1] Xiamen Univ, Dept Phys, Key Lab Semicond & Applicat Fujian Prov, Xiamen 361005, Peoples R China
[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
关键词
II-VI semiconductors; molecular beam epitaxial growth; plasma materials processing; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; solid-state phase transformations; transmission electron microscopy; wide band gap semiconductors; zinc compounds; EPITAXIAL ZNO; HETEROEPITAXIAL GROWTH; THIN-FILMS; PLANE;
D O I
10.1063/1.3647846
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth of ZnO (001) wurtzite thin films with bulk-like opto-electronic properties on MgO (001) cubic substrates using plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and ex situ high resolution transmission electron microscopy images indicate that the structure transition from the cubic MgO substrates to the hexagonal films involves 6 ZnO variants that have the same structure but different orientations. This work demonstrates the possibility of integrating wurtzite ZnO films and functional cubic substrates while maintaining their bulk-like properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647846]
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页数:3
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