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Wurtzite ZnO (001) films grown on cubic MgO (001) with bulk-like opto-electronic properties
被引:14
|作者:
Zhou, Hua
[1
]
Wang, Hui-Qiong
[1
]
Wu, Lijun
[2
]
Zhang, Lihua
[3
]
Kisslinger, Kim
[3
]
Zhu, Yimei
[2
]
Chen, Xiaohang
[1
]
Zhan, Huahan
[1
]
Kang, Junyong
[1
]
机构:
[1] Xiamen Univ, Dept Phys, Key Lab Semicond & Applicat Fujian Prov, Xiamen 361005, Peoples R China
[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
关键词:
II-VI semiconductors;
molecular beam epitaxial growth;
plasma materials processing;
reflection high energy electron diffraction;
semiconductor epitaxial layers;
semiconductor growth;
solid-state phase transformations;
transmission electron microscopy;
wide band gap semiconductors;
zinc compounds;
EPITAXIAL ZNO;
HETEROEPITAXIAL GROWTH;
THIN-FILMS;
PLANE;
D O I:
10.1063/1.3647846
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We report the growth of ZnO (001) wurtzite thin films with bulk-like opto-electronic properties on MgO (001) cubic substrates using plasma-assisted molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and ex situ high resolution transmission electron microscopy images indicate that the structure transition from the cubic MgO substrates to the hexagonal films involves 6 ZnO variants that have the same structure but different orientations. This work demonstrates the possibility of integrating wurtzite ZnO films and functional cubic substrates while maintaining their bulk-like properties. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647846]
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页数:3
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