Droop in III-nitrides: Comparison of bulk and injection contributions

被引：52
|
作者：
David, Aurelien [1 ]
Gardner, Nathan F. [1 ]
机构：
[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期
关键词：
D O I：
10.1063/1.3515851
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study mechanisms which are thought to contribute to efficiency droop in III-nitrides. We first observe droop in a photoluminescence (PL) experiment on bulk GaN, which confirms the existence of a bulk contribution to droop, unrelated to piezoelectric fields or alloy fluctuations. We then perform biased-PL on a series of InGaN light-emitting diodes to estimate the potential impact of carrier leakage on PL experiments. We conclude that carrier leakage is only significant at very low pump densities and does not contribute to droop, thus validating the use of PL to characterize droop. (C) 2010 American Institute of Physics. [doi:10.1063/1.3515851]
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页数：3
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