Optical acceptor ionization in III-nitrides

被引：0

作者：

LeBoeuf, SF ^{[1
]}

Stokes, EB ^{[1
]}

Cao, XA ^{[1
]}

Ebong, A ^{[1
]}

Sandvik, PM ^{[1
]}

Prasad, CR ^{[1
]}

机构：

[1] Gen Elect Res Ctr, Schenectady, NY 12301 USA

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | 2002年 / 2002卷 / 03期

关键词：

D O I：

暂无

中图分类号：

R5 [内科学];

学科分类号：

1002 ; 100201 ;

摘要：

III-nitride device performance is fundamentally limited by low carrier concentration, especially in p-type material. The acceptor ionization energy in Mg-doped GaN is 150 meV or more, resulting in low hole ionization levels at room temperature. In this paper, we demonstrate enhancement of hole concentration in GaN through acceptor ionization by absorption of infrared light.

引用

页码：164 / 171

页数：8

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