Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

被引：4

作者：

Hao, Huilian ^{[1
]}

Zhao, Yue ^{[1
]}

Song, Tianliang ^{[1
]}

Wang, Xu ^{[1
]}

Li, Changwang ^{[1
]}

Li, Wenyao ^{[1
]}

Shen, Wenzhong ^{[2
,3
]}

机构：

[1] Shanghai Univ Engn Sci, Coll Mat Engn, 333 Long Teng Rd, Shanghai 201620, Peoples R China

[2] Shanghai Jiao Tong Univ, Inst Solar Energy, Dept Phys & Astron, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China

[3] Shanghai Jiao Tong Univ, Key Lab Artificial Struct & Quantum Control, Dept Phys & Astron, Minist Educ, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China

来源：

NANOTECHNOLOGY | 2021年 / 32卷 / 50期

基金：

英国工程与自然科学研究理事会;

关键词：

colloidal silicon nanocrystals; light-emitting diode; electroluminescence; charge transport; SI NANOCRYSTALS; DOTS; PHOTOLUMINESCENCE; CONFINEMENT; PERFORMANCE;

D O I：

10.1088/1361-6528/ac2ac1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm(-2) and similar to 6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.

引用

页数：6

共 50 条

[41] Radiation defects in the light-emitting silicon nanocrystals
Korchagina, Taisiya T.
Cherkova, Svetlana G.
Kachurin, Grigorii A.
[J]. EDM 2006: 7TH ANNUAL INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS, 2006, : 64 - +
[42] Perovskite Light-Emitting Diodes with an External Quantum Efficiency Exceeding 30%
Bai, Wenhao
Xuan, Tongtong
Zhao, Haiyan
Dong, Haorui
Cheng, Xinru
Wang, Le
Xie, Rong-Jun
[J]. ADVANCED MATERIALS, 2023, 35 (39)
[43] A strategy to boost external quantum efficiency of organic light-emitting transistors
Cho, Seong-Yong
Kim, Sei-Yong
Jeon, Sohee
Choi, Rino
Lee, Jeong-Hwan
[J]. APPLIED PHYSICS LETTERS, 2019, 115 (04)
[44] Enhancement of extraction efficiency by metallic photonic crystal embedding in light-emitting diode
Chen, Jian
Wang, Qingkang
Li, Haihua
[J]. OPTIK, 2011, 122 (12): : 1079 - 1083
[45] High-external-quantum-efficiency organic light-emitting devices
Gu, G
Garbuzov, DZ
Burrows, PE
Venkatesh, S
Forrest, SR
Thompson, ME
[J]. OPTICS LETTERS, 1997, 22 (06) : 396 - 398
[46] SILICON COMPATIBLE ORGANIC LIGHT-EMITTING DIODE
KIM, HH
MILLER, TM
WESTERWICK, EH
KIM, YO
KWOCK, EW
MORRIS, MD
CERULLO, M
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (12) : 2107 - 2113
[47] Precise measurement of external quantum efficiency of organic light-emitting devices
Tanaka, I
Tokito, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11A): : 7733 - 7736
[48] Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Ryu, Han-Youl
[J]. NANOSCALE RESEARCH LETTERS, 2014, 9 : 1 - 7
[49] Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
Han-Youl Ryu
[J]. Nanoscale Research Letters, 9
[50] GaN-based bipolar cascade light-emitting diode with 250 % peak quantum efficiency
Joachim Piprek
[J]. Optical and Quantum Electronics, 2015, 47 : 1305 - 1310

← 1 2 3 4 5 →