A strategy to boost external quantum efficiency of organic light-emitting transistors

被引:11
|
作者
Cho, Seong-Yong [1 ]
Kim, Sei-Yong [2 ]
Jeon, Sohee [3 ]
Choi, Rino [1 ]
Lee, Jeong-Hwan [1 ]
机构
[1] Inha Univ, Dept Mat Sci & Engn, 100 Inha Ro, Incheon 22212, South Korea
[2] LG Chem Co Ltd, LG Chem Res Pk, 188 Munji Ro, Daejeon 34122, South Korea
[3] KIMM, Nanoconvergence Mech Res Div, Daejeon 34103, South Korea
关键词
FIELD-EFFECT TRANSISTORS; RECOMBINATION ZONE; BRIGHTNESS; TRANSPORT;
D O I
10.1063/1.5094925
中图分类号
O59 [应用物理学];
学科分类号
摘要
Organic light-emitting transistors (OLETs) have emerged as promising light-emitting electronics, combining the functions of a transistor and a diode in a single device. OLETs typically possess outstanding electrical properties but have inefficient optical properties. Here, based on optical simulations, a strategy of how to improve the light output as well as reduce optical energy losses in OLETs is performed. The results reveal that the main optical energy losses occur via the waveguide mode by the organic layers and through absorption by the gate material. These energy losses in OLETs can be significantly reduced by appropriately adjusting the thicknesses and refractive indices of the transporting layers as well as those of the gate materials. This device design opens perspectives in the development of the efficiency of OLETs as high as 40% of external quantum efficiency.
引用
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页数:5
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