STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

被引：1
|
作者：
Xu Mao-Jie [1 ]
Mayandi, Jeyanthinath [2 ]
Wang Xue-Sen [2 ]
Jia Jin-Feng [1 ]
Xue Qi-Kun [3 ]
Dou Xiao-Ming [1 ,4 ]
机构：
[1] Shanghai Jiao Tong Univ, Inst Opt Engn, Shanghai 200240, Peoples R China
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Shanghai Univ Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 10期
关键词：
pit; facet; homoepitaxy; Si(001); SCANNING-TUNNELING-MICROSCOPY; VICINAL SI(001); HOMOEPITAXIAL GROWTH; SI(100) SURFACES; SILICON; INSTABILITIES; NUCLEATION; STEPS;
D O I：
10.1088/1674-1056/19/10/106102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D(B) steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits.
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页数：4
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