Evolution of surface morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxy

被引:21
|
作者
Kim, HJ [1 ]
Noh, DY
Je, JH
Hwu, Y
机构
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju, South Korea
[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea
[4] Acad Sinica, Inst Phys, Taipei, Taiwan
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词
D O I
10.1103/PhysRevB.59.4650
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The evolution of Fe surface morphology during heteroepitaxial growth on Si(lll) and Si(001) substrates was investigated using real-time synchrotron x-ray reflectivity measurements. The growth on the Si(lll) surface was divided into the initial stage heteroepitaxial regime, the intermediate stage crossover regime, and the final-stage homoepitaxial regime. The evolution of the surface roughness in the late stage growth was described by the dynamic scaling exponent of beta similar to 0.24 consistent with reported values. On the Si(001) surface, an interlayer was formed prior to the growth of a nonepitaxial Fe layer. The roughness evolution of the Fe/Si(001) was described by beta similar to 0.36. [S0163-1829(99)04607-X].
引用
收藏
页码:4650 / 4653
页数:4
相关论文
共 50 条
  • [1] Nanoscale dislocation patterning in Bi(111)/Si(001) heteroepitaxy
    Jnawali, G.
    Hattab, H.
    Bobisch, C. A.
    Bernhart, A.
    Zubkov, E.
    Moeller, R.
    Horn-von Hoegen, M.
    SURFACE SCIENCE, 2009, 603 (13) : 2057 - 2061
  • [2] Evolution of porous Si(111) and Si(001) surfaces during epitaxy: Simulation
    Chemakin, AV
    Neizvestny, IG
    Shwartz, NL
    Yanovitskaja, ZS
    Zverev, AV
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2002, 9-10 : 7 - 21
  • [3] On Ni diffusion at Si(111) surface at Fe coadsorption
    Dolbak, AE
    Olshanetsky, BZ
    Zhachuk, RA
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 9-10 : 97 - 103
  • [4] Surface morphology of Cr:Ga2Se3 heteroepitaxy on Si(001)
    Yitamben, E. N.
    Lovejoy, T. C.
    Paul, D. F.
    Callaghan, J. B.
    Ohuchi, F. S.
    Olmstead, M. A.
    PHYSICAL REVIEW B, 2009, 80 (07):
  • [5] GaN heteroepitaxy on Si(001)
    Schulze, F
    Dadgar, A
    Bläsing, J
    Krost, A
    JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 496 - 499
  • [6] In-situ X-ray reflectivity investigation of growth and surface morphology evolution during Fe chemical vapor deposition on Si(001)
    Kellerman, BK
    Chason, E
    Adams, DP
    Mayer, TM
    White, JM
    SURFACE SCIENCE, 1997, 375 (2-3) : 331 - 339
  • [7] Magnetron sputter heteroepitaxy of Si1-xGex/Si(001):: The evolution of the cross-hatched surface
    Vogeli, B
    Kummer, M
    von Kanel, H
    EPITAXY AND APPLICATIONS OF SI-BASED HETEROSTRUCTURES, 1998, 533 : 203 - 208
  • [8] EPITAXIAL-GROWTH OF FE/MO/FE(111) AND FE/CR/FE(111) ON SI(111)
    CHENG, YT
    CHEN, YL
    JOURNAL OF MATERIALS RESEARCH, 1993, 8 (07) : 1567 - 1571
  • [9] Heteroepitaxy of GaN on Si(111)
    Krost, A
    Dadgar, A
    2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 41 - 47
  • [10] Magnetocrystalline anisotropy energy and spin polarization of Fe3Si in bulk and on Si(001) and Si(111) substrates
    Odkhuu, Dorj
    Yun, Won Seok
    Hong, Soon Cheol
    THIN SOLID FILMS, 2011, 519 (23) : 8218 - 8222