Effect of grain size of Pb(Zr0.3Ti0.6)O3 sol-gel derived thin films on the ferroelectric properties

被引:59
|
作者
Yang, JK [1 ]
Kim, WS [1 ]
Park, HR [1 ]
机构
[1] Yonsei Univ, Dept Ceram Engn, Seodaemun Ku, Seoul 120749, South Korea
基金
新加坡国家研究基金会;
关键词
PZT thin film; grain size; grain boundary; leakage current; 90 degrees domain; fatigue;
D O I
10.1016/S0169-4332(00)00718-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lead zirconate titanate (PZT) (Zr/Ti = 40/60) thin films on Pt/SiO2/Si substrate with greatly different grain size were attained well with controlled atomic composition and crystalline orientation by varying the starting solution composition and annealing time. Small and large grained films with (1 1 1)-preferred orientation were obtained and their grain sizes were approximately 110 and 370 nm, respectively. Since annealing treatment induced the alternation of microstructure and stress at the interface, the effect of grain size was discussed in a standpoint of microstructural characteristic. Measurements of ferroelectric and electric properties revealed that small grained film presents more gradual polarization behavior, less degradation of polarization through switching cycles, and lower leakage current density than large grained film. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:544 / 548
页数:5
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