Current and voltage ADC using a differential pair of single-electron bipolar avalanche transistors

被引：1
|
作者：
Lany, Marc [1 ]
Popovic, Radivoje S. [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年
关键词：
Analog-digital conversion; Avalanche breakdown; Bipolar transistors;
D O I：
10.1109/BIPOL.2009.5314129
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-electron bipolar avalanche transistors (SEBATs) enable current sensing by electron counting at room temperature. Here, differential SEBAT circuits combining the functions of amplification and analog-to-digital (A/D) conversion are proposed and characterized for two applications: Low-current AID conversion and differential voltage A/D conversion. Charge detection efficiencies in the order of 30% are reached, allowing for the direct A/D conversion of currents in the 10(-13) A range. An equivalent of the differential pair is used as a differential voltage ADC.
引用
收藏
页码：127 / 130
页数：4
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