Current and voltage ADC using a differential pair of single-electron bipolar avalanche transistors

被引：1

作者：

Lany, Marc ^{[1
]}

Popovic, Radivoje S. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

PROCEEDINGS OF THE 2009 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2009年

关键词：

Analog-digital conversion; Avalanche breakdown; Bipolar transistors;

D O I：

10.1109/BIPOL.2009.5314129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-electron bipolar avalanche transistors (SEBATs) enable current sensing by electron counting at room temperature. Here, differential SEBAT circuits combining the functions of amplification and analog-to-digital (A/D) conversion are proposed and characterized for two applications: Low-current AID conversion and differential voltage A/D conversion. Charge detection efficiencies in the order of 30% are reached, allowing for the direct A/D conversion of currents in the 10(-13) A range. An equivalent of the differential pair is used as a differential voltage ADC.

引用

页码：127 / 130

页数：4

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