A device for heating a substrate during molecular beam epitaxy

被引：0
|
作者：
Shengurov, V. G. [1 ,2 ]
Denisov, S. A. [1 ,2 ]
Svetlov, S. P. [1 ]
Chalkov, V. Yu. [1 ]
Shengurov, D. V. [1 ,2 ]
机构：
[1] NI Lobachevskii State Univ, Pr Gagarina 23, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Microstruct Phys, Ul Akad Skaya 7, Kstovo Raion 607680, Nizhny Novgorod, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2016年 / 59卷 / 02期
关键词：
SILICON-ON-SAPPHIRE; DEPOSITION;
D O I：
10.1134/S0020441216020135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250-1450A degrees C is described. Using the device, it is possible to carefully prepare silicon and sapphire substrates in situ for growing Si and SiGe epitaxial layers by molecular beam epitaxy method.
引用
收藏
页码：317 / 320
页数：4
相关论文
共 50 条
  • [31] GROWTH AND DEVICE APPLICATIONS USING MOLECULAR-BEAM EPITAXY
    CHO, AY
    TSANG, WT
    THIN SOLID FILMS, 1979, 64 (01) : 175 - 175
  • [32] MOLECULAR-BEAM EPITAXY - PRINCIPLE AND APPLICATION TO DEVICE FABRICATION
    PLOOG, K
    NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1978, 31 (06): : 435 - 441
  • [33] AN INDIUM-FREE SUBSTRATE HOLDER FOR RADIATIVE HEATING OF QUARTER-WAFER MOLECULAR-BEAM EPITAXY SAMPLES
    KUHN, KJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1990, 61 (01): : 184 - 185
  • [34] WHISKER GROWTH DURING EPITAXY OF GAAS BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    STAMBERG, R
    KRIKORIAN, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04): : L230 - L232
  • [35] Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
    John, P.
    Ruiz, M. Gomez
    van Deurzen, L.
    Laehnemann, J.
    Trampert, A.
    Geelhaar, L.
    Brandt, O.
    Auzelle, T.
    NANOTECHNOLOGY, 2023, 34 (46)
  • [36] The substrate orientation dependence of In atom incorporation during the growth of (In,Ga)As on GaAs by molecular-beam epitaxy
    Pak, K
    Fahy, MR
    Zhang, XM
    Joyce, BA
    JOURNAL OF CRYSTAL GROWTH, 1998, 186 (1-2) : 21 - 26
  • [37] Influence of substrate orientation on Be transport during molecular beam epitaxy of AlGaAs/GaAs heterojunction bipolar transistors
    Mochizuki, Kazuhiro, 1600, (31):
  • [38] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES
    FISCHER, R
    KLEM, J
    DRUMMOND, TJ
    THORNE, RE
    KOPP, W
    MORKOC, H
    CHO, AY
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510
  • [39] 128×128 photoreceiving matrix device, based on CdHgTe layers, grown by the molecular beam epitaxy method on GaAs substrate
    Avtometriya, 4 (27-34):
  • [40] Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy
    Akahane, Kouichi
    Matsumoto, Atsushi
    Umezawa, Toshimasa
    Tominaga, Yoriko
    Yamamoto, Naokatsu
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (04):
12345