A device for heating a substrate during molecular beam epitaxy

被引：0
|
作者：
Shengurov, V. G. [1 ,2 ]
Denisov, S. A. [1 ,2 ]
Svetlov, S. P. [1 ]
Chalkov, V. Yu. [1 ]
Shengurov, D. V. [1 ,2 ]
机构：
[1] NI Lobachevskii State Univ, Pr Gagarina 23, Nizhnii Novgorod 603950, Russia
[2] Russian Acad Sci, Inst Microstruct Phys, Ul Akad Skaya 7, Kstovo Raion 607680, Nizhny Novgorod, Russia
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2016年 / 59卷 / 02期
关键词：
SILICON-ON-SAPPHIRE; DEPOSITION;
D O I：
10.1134/S0020441216020135
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250-1450A degrees C is described. Using the device, it is possible to carefully prepare silicon and sapphire substrates in situ for growing Si and SiGe epitaxial layers by molecular beam epitaxy method.
引用
收藏
页码：317 / 320
页数：4
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