Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures

被引：1

作者：

Ohadi, Sahar ^{[1
]}

Faez, Rahim ^{[2
]}

Hoseini, Hamid Reza ^{[1
]}

机构：

[1] Islamic Azad Univ, Arak Branch, Dept Elect Engn, Arak, Iran

[2] Sharif Univ Technol, Dept Elect Engn, Tehran, Iran

来源：

IEICE ELECTRONICS EXPRESS | 2010年 / 7卷 / 19期

关键词：

HEMT; InGaAs; breakdown voltage; channel; MODEL; BAND; DC;

D O I：

10.1587/elex.7.1447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAlAs/InGaAs/InP high electron mobility transistors have higher mobility comparing to structures without indium. But existence of indium causes smaller Eg and as a result smaller breakdown voltage. However, increasing percentage of indium results in higher mobility and as a result higher current and transconductance. Therefore decreasing percentage of indium causes higher breakdown voltage at the sometime lower transconductance. One of the most important parameters that limit maximum output power of transistor is breakdown voltage. In this paper, InAlAs/InGaAs/InP HEMTs with different structures are simulated and a structure with a good transconductance and breakdown voltage is introduced.

引用

页码：1447 / 1452

页数：6

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