Measurements of ionization and attachment coefficients in 0.468 % and 4.910% c-C4F8/Ar mixtures and pure c-C4F8

被引:17
|
作者
Yamaji, M [1 ]
Nakamura, Y [1 ]
Morokuma, Y [1 ]
机构
[1] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1088/0022-3727/37/3/021
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured the density normalized ionization coefficients and attachment coefficients in diluted c-C4F8/Ar mixtures and in pure perfluorocyclobutane (c-C4F8) by the steady-state Townsend method. The ionization coefficients in the mixture gas are almost equal to those in pure argon at the high E/N range but differ considerably at the low E/N range. The present coefficients in pure c-C4F8 agree well with previously reported values at the high E/N range, but there are significant differences at the low E/N range. Measurements in the low E/N range were difficult, and there are few data of the attachment coefficients.
引用
收藏
页码:432 / 437
页数:6
相关论文
共 50 条
  • [21] Properties of c-C4F8 inductively coupled plasmas.: II.: Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O2 discharges
    Vasenkov, AV
    Li, X
    Oehrlein, GS
    Kushner, MJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 511 - 530
  • [22] Self-sustained volume discharge in c-C4F8
    Belevtsev, A. A.
    Firsov, K. N.
    Kazantsev, S. Yu.
    Kononov, I. G.
    Podlesnykh, S. V.
    INTERNATIONAL CONFERENCE ON ATOMIC AND MOLECULAR PULSED LASERS XII, 2015, 9810
  • [23] Experiment analysis of decomposition products in typical fault of c-C4F8 gas and insulating gas mixture containing c-C4F8 and N2
    Li, Kang
    Zhang, Guoqiang
    Xing, Weijun
    Han, Dong
    Niu, Wenhao
    Gaodianya Jishu/High Voltage Engineering, 2012, 38 (04): : 985 - 992
  • [24] InvestigationoftheperformanceofCF3I/c-C4F8/N2andCF3I/c-C4F8/CO2gasmixturesfromelectrontransportparameters
    钟蕊霜
    赵谡
    肖登明
    王辉
    江秀臣
    余钟民
    邓云坤
    Plasma Science and Technology, 2020, (05) : 46 - 53
  • [25] c-C4F8/N2与c-C4F8/CO2混合气体的绝缘性能
    满林坤
    邓云坤
    肖登明
    高电压技术, 2017, 43 (03) : 788 - 794
  • [26] ELECTRON-ATTACHMENT TO PERFLUOROCARBON COMPOUNDS .1. C4F6,2-C4F6,1,3-C4F6,C-C4F8 AND 2-C4F8
    CHRISTODOULIDES, AA
    CHRISTOPHOROU, LG
    PAI, RY
    TUNG, CM
    JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (03): : 1156 - 1168
  • [27] Arc erosion behavior and mechanism of Cu/Ti3SiC2 composites in c-C4F8/ CO2 and c-C4F8/N2 mixtures
    Liu, Zhuhan
    Feng, Yi
    Yu, Miao
    Jiang, Ningyuan
    Zhou, Zijue
    Qian, Gang
    VACUUM, 2024, 219
  • [28] Applying a gas mixture containing c-C4F8 as an insulation medium
    Yamamoto, O
    Takuma, T
    Hamada, S
    Yamakawa, Y
    Yashima, M
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2001, 8 (06) : 1075 - 1081
  • [29] Investigation of a self-sustained volume discharge in c-C4F8
    Belevtsev, A. A.
    Firsov, K. N.
    Kazantsev, S. Yu
    Kononov, I. G.
    Podlesnykh, S. V.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (46)
  • [30] Fluorination of silylated nanosilicas using c-C4F8 radiofrequency plasma
    P. O. Kuzema
    Yu. M. Bolbukh
    V. A. Tertykh
    Applied Nanoscience, 2020, 10 : 2495 - 2510