Studies of the growth kinetics of CaF2(111) by molecular beam methods and atomic force microscopy

被引:5
|
作者
Schick, M
Dabringhaus, H
Wandelt, K
机构
[1] Univ Bonn, Mineral Petrolog Inst, D-53115 Bonn, Germany
[2] Univ Bonn, Inst Phys & Theoret Chem, D-53115 Bonn, Germany
关键词
halides; molecular beam epitaxy; growth; surface topography; atomic force microscopy; single crystal surfaces;
D O I
10.1016/j.susc.2005.06.079
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth kinetics of the (1 1 1) surface of CaF2 single crystals is studied by molecular beam methods and atomic force microscopy for temperatures between 1015 and 1099 K and saturation ratios up to 354. After passing a transition stage with repeated two-dimensional nucleation, island growth and coalescence of the growing islands the surface develops growth hillocks with closed loop steps of a height of one F--Ca2+-F-triple layer. The step distance in the hillocks decreases with increasing saturation ratio. The shape of the islands and terraces varies with increasing size from triangular over rounded hexagonal to circular, reflecting the changing importance of step and surface diffusion. Spiral growth is not observed. Condensation coefficients during the intermediate stage are of the order of 0.9 and increase to values close to 1 when the surface becomes covered by growth hills. The comparison of condensation coefficients and step distances yield a value of the mean diffusion length of 156 +/- 40 nm at the experimental temperatures. For the step energy of < 110 > steps of type I values between 0.24 and 0.69 mJ/m are obtained. Experiments with molecular beam pulses show that the effective residence times on the terrace are smaller than 0.02 ms, the shortest time measurable with the experimental set-up. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:42 / 57
页数:16
相关论文
共 50 条
  • [41] Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
    Watanabe, Masahiro
    Maeda, Yasuhisa
    Okano, Shun-ichi
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (6 A):
  • [42] Epitaxial growth and ultraviolet photoluminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)
    Watanabe, M
    Maeda, Y
    Okano, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (6A): : L500 - L502
  • [43] Atomic structure and interface states at CaF2/Si (111)
    Fujitani, Hideaki, 1600, (27):
  • [44] ATOMIC-STRUCTURE OF CAF2/SI(111) INTERFACE AND DEFECT FORMATION ON CAF2(111) SURFACE BY ELECTRON-IRRADIATION
    MIURA, K
    SUGIURA, K
    SOUDA, R
    AIZAWA, T
    OSHIMA, C
    ISHIZAWA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 809 - 813
  • [45] KINETIC INSTABILITY IN THE GROWTH OF CAF2 ON SI(111)
    TROMP, RM
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1994, 73 (01) : 110 - 113
  • [46] Epitaxial growth of CaF2(111) on Cu(111) visualized by STM
    Calleja, F
    Hinarejos, JJ
    de Parga, ALV
    Suturin, SM
    Sokolov, NS
    Miranda, R
    SURFACE SCIENCE, 2005, 582 (1-3) : 14 - 20
  • [47] Epitaxial growth of ferromagnetic Fe3Si films on CaF2/Si(111) by molecular beam epitaxy
    Sunohara, T
    Kobayashi, K
    Umada, M
    Yanagihara, H
    Kita, E
    Akinaga, H
    Suemasu, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L715 - L717
  • [48] Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy
    Kobayashi, K.
    Sunohara, T.
    Umada, M.
    Yanagihara, H.
    Kita, E.
    Suemasu, T.
    THIN SOLID FILMS, 2006, 508 (1-2) : 78 - 81
  • [50] Scanning tunneling microscopy study of initial growth of CaF2 and BaF2 on Si(111)
    Sumiya, T
    Miura, T
    Fujinuma, H
    Tanaka, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B): : L1077 - L1080