Micro-patterning of PZT thick film by lift-off using ZnO as a sacrificial layer

被引：11
|
作者：
Li, Junhong [1 ]
Ren, Wei [1 ]
Wang, Chenghao [1 ]
Liu, Mengwei [1 ]
Fan, Guoxiang [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Acoust, Beijing 100190, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2015年 / 41卷 / 06期
基金：
中国国家自然科学基金;
关键词：
ZnO; Composite sol-gel; Micro-patterning; Lift-off; PZT thick film; ELECTRODE; STRESS;
D O I：
10.1016/j.ceramint.2015.02.028
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Micro-pattern of 8.2-mu m-thick PZT films was prepared on Pt/Ti/SiO2/Si (1 0 0) substrate wafer by combining composite sol gel and a novel lift-off using ZnO as a sacrificial layer. The processes include ZnO sacrificial layer deposition and patterning, PZT film preparation, and final liftoff. The results reveal the micro-pattern was better than that formed by wet etching, the PZT thick films patterned by lift-off possessed similar dielectric characters, better ferroelectric properties, and higher breakdown voltage than those of films patterned by wet etching. The lift-off is suitable for micro-patterning of PZT thick films. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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页码：7325 / 7328
页数：4
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