Preparation of PNN-PZT thick film on Pt/Ti/SiO2/Si substrate by laser lift-off process

被引：9
|
作者：
Li, KY
Tai, NH [1 ]
Lin, IN
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan
[3] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
来源：
INTEGRATED FERROELECTRICS | 2005年 / 69卷
关键词：
D O I：
10.1080/10584580590897470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thick PNN-PZT films, about 25 mum, were successfully prepared by combining the screen printing and laser lift-off techniques. PNN-PZT films screen printed on sapphire substrate, after sintering at 1200degreesC (3 h), are secondary free perovskite, possessing good ferroelectric properties (Pr = 16.4 muC/cm(2), Ec = 12.6 kV/cm). Silver-bonding and laser lift-off processes can successfully transfer the PNN-PZT films from the sapphire to silicon substrates, maintaining ferroelectric properties. The resulted PNN-PZT/Si thick films possess larger electrical polarization: (Pr = 16.5 muC/cm(2)) with slightly larger coercive field (Ec = 24.6 W/cm).
引用
收藏
页码：135 / 141
页数：7
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