Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

被引：4

作者：

Helleboid, Remi ^{[1
,2
,3
]}

Rideau, Denis ^{[1
]}

Grebot, Jeremy ^{[1
]}

Nicholson, Isobel ^{[4
]}

Moussy, Norbert ^{[2
]}

Saxod, Olivier ^{[2
]}

Basset, Marie ^{[1
]}

Zimmer, Antonin ^{[1
]}

Mamdy, Bastien ^{[1
]}

Golanski, Dominique ^{[1
]}

Agnew, Megan ^{[4
]}

Pellegrini, Sara ^{[4
]}

Sicre, Mathieu ^{[1
]}

Buj, Christel ^{[1
]}

Marchand, Guillaume ^{[1
]}

Saint-Martin, Jerome ^{[3
]}

Pala, Marco ^{[3
]}

Dollfus, Philippe ^{[3
]}

机构：

[1] STMicroelectronics, TDP TOS, F-38926 Crolles, France

[2] CEA LETI, F-38054 Grenoble, France

[3] Univ Paris Saclay, CNRS, Ctr Nanosci & Nanotechnol, F-91120 Palaiseau, France

[4] STMicroelectronics, IMG Div, Edinburgh EH3 5DA, Midlothian, Scotland

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

关键词：

Single-photon avalanche diodes; Jitter; Semiconductor process modeling; Computational modeling; Solid modeling; Silicon; Photonics; Avalanche breakdown probability; breakdown voltage; jitter; photon detection efficiency (PDE); single-photon avalanche diode (SPAD); technology computer-aided design (TCAD); AVALANCHE-DIODE; TECHNOLOGY;

D O I：

10.1109/JEDS.2022.3168365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers' trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.

引用

页码：584 / 592

页数：9

共 33 条

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Helleboid, Remi
Rideau, Denis
Nicholson, Isobel
Moussy, Norbert
Saxod, Olivier
Basset, Marie
Grebot, Jeremy
Zimmerman, Antonin
Mamdy, Bastien
Golanski, Dominique
Agnew, Megan
Pellegrini, Sara
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