Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

被引:4
|
作者
Helleboid, Remi [1 ,2 ]
Rideau, Denis [3 ]
Grebot, Jeremy [3 ]
Nicholson, Isobel [3 ]
Moussy, Norbert [2 ]
Saxod, Olivier [2 ]
Saint-Martin, Jeromem [1 ]
Pala, Marco [1 ]
机构
[1] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, CNRS, Palaiseau, France
[2] CEA LETI, Grenoble, France
[3] STMicroelectronics, Edinburgh, Scotland
关键词
Avalanche breakdown probability; Breakdown voltage; Jitter; Photon detection efficiency (PDE); Single-photon avalanche diode (SPAD); Technology computer-aided design (TCAD); ELECTRIC-FIELD; SILICON;
D O I
10.1016/j.sse.2022.108376
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new methodology to accurately simulate the Photon Detection Efficiency and the Jitter tail of SPAD devices is presented. This method first relies on the use of the electric field lines to mimic the carriers' trajectories. A model for impact ionization and avalanche probability is then used on the obtained lines to simulate the probability of avalanche, coupled with the optical absorption, the PDE is then extracted. Finally, an advection-diffusion model is used to simulate the drift and diffusion of carriers within the device, which leads to the timing jitter due to the transport time from the photogeneration spot to the avalanche region. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.
引用
收藏
页数:4
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