Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

被引：6
|
作者：
Liu, Yi-Jung [1 ]
Chen, Huey-Ing [2 ]
Cheng, Shiou-Ying [3 ]
Lin, Kun-Wei [4 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[3] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
[4] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, Taichung 50094, Taiwan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期
关键词：
light-emitting diode; vicinal sapphire; gallium nitride; ESD CHARACTERISTICS; QUANTUM-WELLS; LEDS; FILMS; REDUCTION;
D O I：
10.1002/pssc.201000579
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2 degrees tilt sapphire substrate exhibits the lowest defect density while that with a 1.0 degrees tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2 degrees-tilt sapphire. At 60 mA, the improved value is up to 45.7 %. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1664 / 1668
页数：5
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