Investigation of GaN-based light-emitting diodes grown on vicinal sapphire substrates

被引：6

作者：

Liu, Yi-Jung ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Cheng, Shiou-Ying ^{[3
]}

Lin, Kun-Wei ^{[4
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[3] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

[4] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, Taichung 50094, Taiwan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期

关键词：

light-emitting diode; vicinal sapphire; gallium nitride; ESD CHARACTERISTICS; QUANTUM-WELLS; LEDS; FILMS; REDUCTION;

D O I：

10.1002/pssc.201000579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. All the electrical characteristics demonstrate that the LED with a 0.2 degrees tilt sapphire substrate exhibits the lowest defect density while that with a 1.0 degrees tilt sapphire exhibits the highest one. At 2 mA, the enhanced output power of 23.3% indicates the substantial reduction of defect-related nonradiative recombination centers in MQW for the LED device with a 0.2 degrees-tilt sapphire. At 60 mA, the improved value is up to 45.7 %. This is primarily caused by the presence of indium quantum dots (QDs) in MQW which provides increased quantum efficiency. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1664 / 1668

页数：5

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