Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering

被引：20
|
作者：
Shantheyanda, B. P. [2 ]
Todi, V. O. [2 ]
Sundaram, K. B. [2 ]
Vijayakumar, A. [1 ]
Oladeji, I. [1 ]
机构：
[1] Planar Energy Inc, Orlando, FL 32805 USA
[2] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 05期
关键词：
ZINC-OXIDE FILMS; CHEMICAL-VAPOR-DEPOSITION; TRANSPARENT CONDUCTING FILMS; SOL-GEL PROCESS; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; TEMPERATURE; PLASMA; OXYGEN; TARGET;
D O I：
10.1116/1.3624787
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Aluminum doped zinc oxide (AZO) thin films were obtained by RF magnetron sputtering. The effects of deposition parameters such as power, gas flow conditions, and substrate heating have been studied. Deposited and annealed films were characterized for composition as well as microstructure using x ray photoelectron spectroscopy and x ray diffraction. Films produced were polycrystalline in nature. Surface imaging and roughness studies were carried out using SEM and AFM, respectively. Columnar grain growth was predominantly observed. Optical and electrical properties were evaluated for transparent conducting oxide applications. Processing conditions were optimized to obtain highly transparent AZO films with a low resistivity value of 6.67 x 10(-4) Omega cm. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3624787]
引用
收藏
页数：9
相关论文
共 50 条
  • [1] Effects of sputtering power on Al doped ZnO thin films deposited by RF magnetron sputtering
    Gao, Li-Hua
    Zheng, Yu-Ying
    Gongneng Cailiao/Journal of Functional Materials, 2015, 46 (08): : 08028 - 08030
  • [2] Fluorine doped ZnO thin films by RF magnetron sputtering
    Treharne, R. E.
    Durose, K.
    THIN SOLID FILMS, 2011, 519 (21) : 7579 - 7582
  • [3] Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering
    Li, L. J.
    Deng, H.
    Dai, L. P.
    Chen, J. J.
    Yuan, Q. L.
    Li, Y.
    MATERIALS RESEARCH BULLETIN, 2008, 43 (06) : 1456 - 1462
  • [4] Effects of sputtering pressure on properties of Al doped ZnO thin films dynamically deposited by rf magnetron sputtering
    Zhou, H. B.
    Zhang, H. Y.
    Tan, M. L.
    Zhang, W. J.
    Zhang, W. L.
    MATERIALS RESEARCH INNOVATIONS, 2012, 16 (06) : 390 - 394
  • [5] Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering
    Shuai, Weiqiang
    Hu, Yuehui
    Chen, Yichuan
    Tong, Fan
    Lao, Zixuan
    PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON EDUCATION, MANAGEMENT, INFORMATION AND MECHANICAL ENGINEERING (EMIM 2017), 2017, 76 : 1789 - 1792
  • [6] Effect of Stress, Strain and Optical properties in Vacuum and Normal annealed ZnO Thin Films Using RF Magnetron Sputtering
    Kumar, B. Santhosh
    Purvaja, K.
    Harinee, N.
    Venkateswaran, C.
    2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017), 2018, 1953
  • [7] V-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering
    Shao, W. D.
    Chen, X. F.
    Ren, W.
    Shi, P.
    Wu, X. Q.
    Tan, O. K.
    Zhu, W. G.
    Yao, X.
    FERROELECTRICS, 2010, 406 : 10 - 15
  • [8] The properties of Al doped ZnO thin films deposited on various substrate materials by RF magnetron sputtering
    Wang, Xiaojin
    Zeng, Xiangbin
    Huang, Diqiu
    Zhang, Xiao
    Li, Qing
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2012, 23 (08) : 1580 - 1586
  • [9] CONDUCTIVE AND TRANSPARENT AL-DOPED ZNO THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING
    CHEN, YI
    DUH, JG
    MATERIALS CHEMISTRY AND PHYSICS, 1991, 27 (04) : 427 - 439
  • [10] Boron doped ZnO thin films fabricated by RF-magnetron sputtering
    Gao, Li
    Zhang, Yan
    Zhang, Jian-Min
    Xu, Ke-Wei
    APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2498 - 2502
12345