Magnetic field effects in InP self-assembled quantum dots

被引:17
|
作者
Sugisaki, M
Ren, HW
Nishi, K
Sugou, S
Okuno, T
Masumoto, Y
机构
[1] Tsukuba Res Consortium, JST, ERATO, Single Quantum Dot Project, Ibaraki, Osaka 3002635, Japan
[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan
[3] Univ Tsukuba, Inst Phys, Ibaraki, Osaka 3058571, Japan
关键词
self-assembled quantum dot; single quantum dot spectroscopy; diamagnetic shift; Zeeman splitting;
D O I
10.1016/S0921-4526(98)00675-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Optical properties of InP self-assembled quantum dots (SADs) were investigated in the presence of a magnetic field up to 10 T. By using a mu m-sized InP/GaInP mesa, we succeeded in observing sharp photoluminescence (PL) lines from a single InP quantum dot. With the increase of the magnetic field, the diamagnetic shift and the Zeeman splitting were clearly observed in the Faraday configuration. The diamagnetic coefficient and the effective g-value of the confined excitons show fluctuations reflecting dispersion in the size and the shape of the quantum dots. The estimated g-value of the InP quantum dot is about half of that of the bulk InP because of the heavy-hole light-hole band mixing. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:169 / 172
页数:4
相关论文
共 50 条
  • [41] Self-assembled InAs/InP quantum dots transform into quantum rings without capping
    Ranjan, V
    MRS BULLETIN, 2005, 30 (10) : 686 - 686
  • [42] Charging Effects in Self-Assembled CdTe Quantum Dots
    Klopotowski, L.
    ACTA PHYSICA POLONICA A, 2011, 120 (05) : 819 - 829
  • [43] Spin effects in InAs self-assembled quantum dots
    Ednilson C dos Santos
    Yara Galvão Gobato
    Maria JSP Brasil
    David A Taylor
    Mohamed Henini
    Nanoscale Research Letters, 6
  • [44] Self-Assembled InAs/InP Quantum Dots Transform into Quantum Rings without Capping
    Vivek Ranjan
    MRS Bulletin, 2005, 30 : 686 - 686
  • [45] Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
    Khan, Mohammed Zahed Mustafa
    Ng, Tien Khee
    Ooi, Boon S.
    PROGRESS IN QUANTUM ELECTRONICS, 2014, 38 (06) : 237 - 313
  • [46] Spin effects in InAs self-assembled quantum dots
    dos Santos, Ednilson C.
    Gobato, Yara Galvao
    Brasil, Maria J. S. P.
    Taylor, David A.
    Henini, Mohamed
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [47] Magnetic-field dependence of hole levels in self-assembled InGaAs quantum dots
    Climente, JI
    Planelles, J
    Pi, M
    Malet, F
    PHYSICAL REVIEW B, 2005, 72 (23):
  • [48] Spin relaxation time of CdZnSe/ZnSe self-assembled quantum dots in a magnetic field
    Lee, S.
    Dobrowolska, M.
    Furdyna, J. K.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (01) : 221 - 226
  • [49] Growth and magnetic properties of self-assembled (In, Mn)As quantum dots
    Chen, YF
    Lee, WN
    Huang, JH
    Chin, TS
    Huang, RT
    Chen, FR
    Kai, JJ
    Aravind, K
    Lin, IN
    Ku, HC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1376 - 1378
  • [50] Electron and hole localization in coupled InP/InGaP self-assembled quantum dots
    Tadic, M
    Peeters, FM
    Partoens, B
    Janssens, KL
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 237 - 240