Magnetic field effects in InP self-assembled quantum dots

被引:17
|
作者
Sugisaki, M
Ren, HW
Nishi, K
Sugou, S
Okuno, T
Masumoto, Y
机构
[1] Tsukuba Res Consortium, JST, ERATO, Single Quantum Dot Project, Ibaraki, Osaka 3002635, Japan
[2] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan
[3] Univ Tsukuba, Inst Phys, Ibaraki, Osaka 3058571, Japan
关键词
self-assembled quantum dot; single quantum dot spectroscopy; diamagnetic shift; Zeeman splitting;
D O I
10.1016/S0921-4526(98)00675-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Optical properties of InP self-assembled quantum dots (SADs) were investigated in the presence of a magnetic field up to 10 T. By using a mu m-sized InP/GaInP mesa, we succeeded in observing sharp photoluminescence (PL) lines from a single InP quantum dot. With the increase of the magnetic field, the diamagnetic shift and the Zeeman splitting were clearly observed in the Faraday configuration. The diamagnetic coefficient and the effective g-value of the confined excitons show fluctuations reflecting dispersion in the size and the shape of the quantum dots. The estimated g-value of the InP quantum dot is about half of that of the bulk InP because of the heavy-hole light-hole band mixing. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:169 / 172
页数:4
相关论文
共 50 条
  • [31] InAs self-assembled quantum dots on InP by molecular beam epitaxy
    Fafard, S
    Wasilewski, Z
    McCaffrey, J
    Raymond, S
    Charbonneau, S
    APPLIED PHYSICS LETTERS, 1996, 68 (07) : 991 - 993
  • [32] Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
    Hamdaoui, N.
    Ajjel, R.
    Maaref, H.
    Salem, B.
    Bremond, G.
    Gendry, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (06)
  • [33] Electron and hole confinement in stacked self-assembled InP quantum dots
    Hayne, M
    Provoost, R
    Zundel, MK
    Manz, YL
    Eberl, K
    Moshchalkov, VV
    PHYSICAL REVIEW B, 2000, 62 (15): : 10324 - 10328
  • [34] Self-assembled InAs quantum dots on InP nano-templates
    Lefebvre, J
    Poole, PJ
    Fraser, J
    Aers, GC
    Chithrani, D
    Williams, RL
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 391 - 398
  • [35] Interaction of self-assembled InAs/InGaAsP/InP (001) quantum dots
    Chen, Xinyu
    Xiong, Yiling
    Zhang, Xiupu
    OPTICS COMMUNICATIONS, 2018, 429 : 18 - 28
  • [36] Thermal stability of stacked self-assembled InP quantum dots in GaInP
    Jin-Phillipp, NY
    Du, K
    Phillipp, F
    Zundel, M
    Eberl, K
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 3255 - 3260
  • [37] Self-assembled quantum dots
    Univ of Nottingham, Nottingham, United Kingdom
    III Vs Rev, 3 (25-30):
  • [38] Electric field effects on the spatial energy transport in self-assembled quantum dots
    Chaib, J. P. M.
    da Silva, S. W.
    Monte, A. F. G.
    Morais, P. C.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (10)
  • [39] Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots
    Kim, JS
    Kim, EK
    Park, K
    Yoon, E
    Han, IK
    Park, YJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4): : 91 - 95
  • [40] Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping
    Sormunen, J
    Riikonen, J
    Mattila, M
    Tiilikainen, J
    Sopanen, M
    Lipsanen, H
    NANO LETTERS, 2005, 5 (08) : 1541 - 1543