Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field

被引：21

作者：

Sidor, Y. ^{[1
]}

Partoens, B. ^{[1
]}

Peeters, F. M. ^{[1
]}

Maes, J. ^{[2
]}

Hayne, M. ^{[3
]}

Fuster, D. ^{[4
]}

Gonzalez, Y. ^{[4
]}

Gonzalez, L. ^{[4
]}

Moshchalkov, V. V. ^{[2
]}

机构：

[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium

[2] Katholieke Univ Leuven, Pulsed Field Grp, Inst Nanoscale Phys & Chem, B-3001 Louvain, Belgium

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[4] CSIC, Ctr Nacl Microelect, Inst Microelect Madrid, Madrid 28760, Spain

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.76.195320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The charge confinement in InAs/InP based quantum wells and self-assembled quantum wires is investigated theoretically and experimentally through the study of the exciton diamagnetic shift. The numerical calculations are performed within the single-band effective mass approximation, including band nonparabolicity and strain effects. The exciton diamagnetic shift is obtained for quantum wires and quantum wells incorporating local width fluctuations, as well as the electron-hole Coulomb interaction energy. Both electrons and holes (but to a lesser extent) show a substantial penetration into the InP barrier. A detailed comparison is made between the theoretical and experimental data on the magnetic field dependence of the exciton diamagnetic shift. Our theoretical analysis shows that excitons in the InAs/InP quantum well are trapped by local well width fluctuations.

引用

页数：9

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