Exciton recombination dynamics in InAs/InP self-assembled quantum wires -: art. no. 205329

被引：16
|
作者：
Fuster, D
Martínez-Pastor, J
González, L
González, Y
机构：
[1] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain
[2] Univ Valencia, Inst Ciencia Mat, Valencia 46071, Spain
来源：
PHYSICAL REVIEW B | 2005年 / 71卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.71.205329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work we investigate the exciton recombination dynamics in InAs/InP semiconductor self-assembled quantum wires, by means of continuous wave and time resolved photoluminescence. The continuous wave photoluminescence results seem to indicate that the temperature quenching of the emission band seems to be more probably due to unipolar thermal escape of electrons towards the InP barrier. On the other hand, the analysis of time resolved photoluminescence reveals that the temperature dependence of the radiative and nonradiative recombination times is mainly determined by the dynamics of excitons localized by disorder (high energy tail of the PL band) and strongly localized (low energy tail of the PL band) in local size fluctuations of the quantum wires.
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页数：7
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