An accurate, large signal, high frequency model for GaAs HBTs

被引：29
|
作者：
Camnitz, LH
Kofol, S
Low, T
Bahl, SR
机构：
来源：
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/GAAS.1996.567895
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate compact circuit simulation model has been developed for the large-signal, high-frequency behavior of GaAs single heterojunction bipolar transistors (HBTs). A unified, physically-based, quasistatic collector charge function models both base-collector capacitance and collector transit time. it naturally handles collector space-charge effects, ''full-depletion'' of the collector n(-) region, and the dependence of the high-field electron velocity in GaAs on electric field and temperature. An improved charge expression accounts for the Kirk effect. This formulation has produced excellent model fits to measurements of AlGaAs/GaAs HBTs.
引用
收藏
页码：303 / 306
页数：4
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